SE1470-001L Datasheet, PDF (1/4 Pages) Honeywell Accelerometers – AlGaAs Infrared Emitting Diode

SE1470
AlGaAs Infrared Emitting Diode
FEATURES
• Compact metal can coaxial package
• 24¡ (nominal) beam angle
• 880 nm wavelength
• Higher output power than GaAs at equivalent
drive currents
• Wide operating temperature range
(- 55¡C to +125¡C)
• Mechanically and spectrally matched to SD1420
photodiode, SD1440 phototransistor and
SD1410 photodarlington
DESCRIPTION
The SE1470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a glass
lensed metal can coaxial package. The package may
have a tab or second lead welded to the can as an
optional feature (SE1470-XXXL). Both leads are flexible
and may be formed as required to fit various mounting
configurations. These devices typically exhibit 70%
greater power intensity than gallium arsenide devices at
the same forward current.
INFRA-63.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE1470-XXX
.091(2.26)
.062(1.57) DIA
.079(2.01)
DIA
.076(1.93)
.122(3.10)
.106(2.69)
DIM_001a.ds4
SE1470-XXXL
.091(2.26)
.062(1.57) DIA
.079(2.01)
DIA
.076(1.93)
.122(3.10)
.106(2.69)
DIM_001b.ds4
CATHODE (CASE)
ANODE
.020(0.51) DIA
.010(0.25)
1.000(25.40)
MIN
.095(2.41) DIA
.020
(0.51) DIA
CATHODE
~~
ANODE
~~
.020
(0.51) DIA
.010(0.25)
1.000(25.40)
TYPICAL MIN
.095(2.41) DIA
Honeywell reserves the right to make
12
h
changes in order to improve design and
supply the best products possible.