HMC995LP5GE Datasheet, PDF (8/10 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz

HMC995LP5GE
v00.0611
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
Pin Descriptions
Pin Number
Function
1-3, 9, 14
17-19, 23, 24
N/C
Description
These pins are not connected internally, however all data
shown herein was measured with these pins connected to
RF/DC ground externally.
4
RFIN
This pad is DC coupled and matched to 50 Ohms.
5, 15
GND
These pins and package bottom must be
connected to RF/DC ground.
Interface Schematic
6-8
Vgg1, Vgg2
Vgg3
Gate control for amplifier. External bypass capacitors of
100pF, 10nF and 4.7uF are required. Please follow “MMIC
Amplifier Biasing Proceedure” App Note.
10, 11
20-22
Vdd1, Vdd2,
Vdd3, Vdd4, Vdd5
Drain bias voltage for the amplifier. External bypass
capacitors of 100pF, 10nF and 4.7µF capacitors are
required.
DC voltage of diode biased through external resistor, used
12
Vref
for temperature compensation of Vdet. See Application
Circuit.
DC voltage representing RF output power rectified by diode
13
Vdet
which is biased through an external resistor. See Appilation
Circuit.
16
RFOUT
This pin is DC coupled and matched to 50 Ohms.
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