HMC797 Datasheet, PDF (7/10 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz

v02.1011
HMC797
GaAs PHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
3
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
Gate control 2 for amplifier. Attach bypass
2
VGG2
capacitors per application circuit herein. For nominal
operation +3.5V should be applied to Vgg2.
4, 7
ACG2, ACG4
Low frequency termination. Attach bypass
capacitors per application circuit herein.
3
ACG1
Low frequency termination. Attach bypass
capacitors per application circuit herein.
5
RFOUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass
capacitor per application circuit herein.
8
Die Bottom
VGG1
GND
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Die bottom must be connected to RF/DC ground.
Interface Schematic
3-7
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