HMC616LP3 Datasheet, PDF (7/10 Pages) Hittite Microwave Corporation – GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz

v00.0508
HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Vdd (V)
Rbias (Ω)
Idd (mA)
Min
Max
Recommended
2.7k
27
3.92k
31
3V
1K ^[1]
Open Circuit
4.7k
33
10k
39
820
73
2k
84
5V
0
Open Circuit
3.92k
91
10k
95
[1] With Vdd= 3V, Rbias < 1K Ohm is not recommeded and may result in the LNA becoming conditionally stable.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.93 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6 Vdc
+10 dBm
150 °C
0.58 W
112 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply
Current vs. Vdd (Rbias = 3.92kΩ)
Vdd (Vdc)
Idd (mA)
2.7
20
3.0
30
3.3
40
4.5
80
5.0
90
5.5
100
Note: Amplifier will operate over full voltage range shown above.
5 - 242
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com