HMC999 Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz

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HMC999
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Second Harmonics vs. Idd @
Pout = +26 dBm, Vdd = 48V
70
60
50
40
30
800mA
20
900mA
1000mA
10
1100mA
0
0
2
4
6
8
10
12
FREQUENCY(GHz)
Second Harmonics vs. Pout
Vdd = 48V & Vgg = 22V & Idd = 1100 mA
70
60
50
40
30
20
+14 dBm
+18 dBm
+22 dBm
10
+26 dBm
+30 dBm
0
0
2
4
6
8
10
12
FREQUENCY(GHz)
Second Harmonics vs. Vdd @
Pout = +26 dBm, Idd = 1100 mA
70
60
+48V
+40V
50
+28V
40
30
20
10
0
0
2
4
6
8
10
12
FREQUENCY(GHz)
Second Harmonics vs. Temperature
Vdd = 48V & Vgg = 22V & Idd = 1100 mA
Pout = 26 dBm
70
60
+25C
+85C
50
40
30
20
10
0
0
2
4
6
8
10
12
FREQUENCY(GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
56V
Gate Bias Voltage (Vgg1)
-5 to 0V
Gate Bias Voltage (Vgg2)
6V to (Vdd - 8V)
RF Input Power @ Fin < 0.2GHz (RFIN) 28 dBm
RF Input Power @ Fin > 0.2GHz (RFIN) 36 dBm
Channel Temperature
225 °C
Continuous Pdiss (T= 85 °C)
(derate 729 mW/°C above 85 °C)
102 W
Thermal Resistance ^[1]
1.37 °C/W
Output Power into VSWR > 7:1
40 dBm
Storage Temperature
-65 to 150 °C
Operating Temperature
-55 to 85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Vdd (V)
28
40
48
Idd (mA)
1100
1100
1100
[1] Includes 0.5 mil thick thermally conductive epoxy layer. Epoxy thermal conductivity = 60 W/mC
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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