HMC719LP4 Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz

v04.0610
HMC719LP4 / 719LP4E
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
Absolute Bias Resistor
7
Range & Recommended Bias Resistor Values for Idd
Rbias Ω
Vdd (V)
Idd1 (mA)
Idd2 (mA)
Min
Max
Recommended
1k
27
154
3V
1K ^[1]
Open Circuit
1.5k
33
154
10k
46
154
120
70
168
5V
0
Open Circuit
470
88
168
1.5k
104
168
[1] Operation with Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 21.2 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
5.5 V
-5 dBm
175 °C
1.9 W
47.3 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply
Current vs. Vdd (Rbias = 1.5k)
Vdd (V)
Idd1 (mA)
Idd2 (mA)
2.7
22
150
3.0
33
154
3.3
44
155
4.5
87
163
5.0
104
168
5.5
121
169
Note: Amplifier will operate over full voltage ranges shown above.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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