HMC618LP3 Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz

v04.0508
HMC618LP3 / 618LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Absolute Bias Resistor
5
Range & Recommended Bias Resistor Values for Idd
Vdd1 = Vdd2 (V)
Min (Ohms)
Rbias
Max (Ohms)
R1 (Ohms)
Idd1 + Idd2 (mA)
1k
28
3V
1K ^[1]
Open Circuit
1.5k
34
10k
47
120
71
5V
0
Open Circuit
470
89
10k
117
[1] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 9.68 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6V
+10 dBm
150 °C
0.63 W
103.4 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply
Current vs. Vdd (R_bias = 10K)
Vdd (Vdc)
Idd (mA)
2.7
35
3.0
47
3.3
58
4.5
101
5.0
117
5.5
133
Note: Amplifier will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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