HMC591LP5 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz

Pad Descriptions
Pad Number
1, 2, 6 - 8,
10 - 12, 14, 15,
17 - 19, 23, 24,
26, 27, 29 - 31
Function
N/C
3, 5, 20, 22
GND
4
RFIN
v02.0107
HMC591LP5 / 591LP5E
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
5
Description
Not connected.
Interface Schematic
Package bottom has an exposed metal paddle
that must be connected to RF/DC ground.
This pad is AC coupled and
matched to 50 Ohms.
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Amplifier Biasing Procedure”
9
Vgg
Application Note. External bypass capacitors of
100 pF and 2.2 μF are required.
13, 16, 25, 28, 32
Vdd 1-5
21
RFOUT
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 2.2 μF are required.
This pad is AC coupled and
matched to 50 Ohms.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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