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HMC339 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 33 - 42 GHz
v01.0803
MICROWAVE CORPORATION
HMC339
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 33 - 42 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
5
Pad Descriptions
Pad Number
Function
1
Vdd
Description
Power supply for the LO Amplifier. An external RF bypass
capacitor of 100 - 330 pF is required. A MIM border capacitor is
recommended. The bond length to the capacitor should be as
short as possible. The ground side of the capacitor should be
connected to the housing ground.
2
RF Port
RF Port. This pad is AC coupled and matched to 50 Ohm from
33 - 42 GHz.
IF Port. This pad is DC coupled and should be DC blocked
externally using a series capacitor whose value has been
3
IF Port
chosen to pass the necessary IF frequency range. Any applied
DC voltage to this pin will result in die non-function and possible
die failure.
4
LO Port
LO Port. This pad is AC coupled and matched to 50 Ohm from
16 - 21 GHz
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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