HMC1022_12 Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC

HMC1022
v00.0811
GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC - 48 GHz
Second Harmonics vs. Temperature @ Pout =
10 dBm, Vdd = 10V & Vgg = 4.5V, 150 mA
70
60
50
+25C
+85C
-55C
40
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
Second Harmonics vs.
Vdd @ Pout = 10 dBm, Idd = 150 mA ^[1]
70
60
+8V
50
+10V
+11V
40
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
Second Harmonics vs. Pout
Vdd = 10V & Vgg = 4.5V & Idd = 150 mA
70
+4 dBm
60
+6 dBm
+8 dBm
+10 dBm
50
+12 dBm
+14 dBm
+16 dBm
40
+18 dBm
30
20
10
0
0
4
8
12
16
20
24
FREQUENCY(GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
12V
Output Power into VSWR >7:1 24 dBm
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Storage Temperature
-65 to 150 °C
For Vdd = 12V, Vgg2 = 5.5V
Idd >125mA
Operating Temperature
-55 to 85 °C
Gate Bias Voltage (Vgg2)
For Vdd between 8.5V to 11V,
Vgg2 = (Vdd - 6.5V) to 5.5V
For Vdd < 8.5V,
Vgg2 must remain > 2V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RF Input Power (RFIN)
Channel Temperature
20 dBm
150 °C
Typical Supply Current vs. Vdd
Continuous Pdiss (T= 85 °C)
(derate 27 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
1.76 W
37 °C/W
[1] For Vdd= +8V, Vgg=+3.5V; for Vdd= +10V, Vgg= +4.5V; for Vdd= 11V Vgg= +5.5V.
Vdd (V)
+8
+10
+11
Idd (mA)
150
150
150
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
6
Application Support: Phone: [phone] or [e-mail]