HMC863LP4E_11 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - 26.5 GHz

v02.0111
Gain & Power vs.
Supply Current @ 25 GHz
32
30
Gain
P1dB
Psat
28
26
9
24
22
20
18
300
320
340
360
380
400
Idd (mA)
HMC863LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Gain & Power vs.
Supply Voltage @ 25 GHz
32
Gain
30
P1dB
Psat
28
26
24
22
20
18
5
5.2
5.4
5.6
5.8
6
Vdd (V)
Power Dissipation
4
3.5
23 GHz
24 GHz
25 GHz
3
26 GHz
27 GHz
2.5
2
1.5
1
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 37 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
6.3V
+26 dBm
150 °C
2.52 W
26.9 C/W
-65 to +150 °C
-55 to +85 °C
Class 0, 150V
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+5.0
350
+5.5
350
+6.0
350
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 350mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]