HMC784MS8GE Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz

v00.0808
Bias Voltage & Current
Vdd (V)
+3
+5
+8
Typical Idd (μA)
0.5
2
20
Truth Table
Control Input (Vctl)
A
B
High
Low
Low
High
Signal Path State
RFC to RF1 RFC to RF2
Off
On
On
Off
HMC784MS8GE
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Control Voltages & Currents
State
Low (0 to +0.2V)
High (Vdd ±0.2V)
Vdd = +3V
(μA)
0.5
0.1
Vdd = +5V
(μA)
2
0.1
Vdd = +8V
(μA)
20
0.1
11
Absolute Maximum Ratings
RF Input Power (Vdd = +8V,
+39 dBm (T = +85 °C)
50 Ohm source & load impedances)
Supply Voltage Range
(Vdd) (Vctl = 0V)
-0.2 to +9V
Control Voltage Range (A & B)
-0.2 to Vdd +0.5V
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 25 mW/°C above 85 °C)
1.217 W
Thermal Resistance
(Channel to ground paddle)
53.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Rating
Class 1A HBM
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11 - 228
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