HMC694 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz

v03.1108
6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3)
Gate Bias Voltage (Vgg1, 2)
Gain Control Voltage (Vctrl)
RF Input Power
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 10.2 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5V
-3 to 0V
-3 to 0V
+5 dBm
175 °C
0.92 W
97.6 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC694
GaAs MMIC ANALOG VARIABLE
GAIN AMPLIFIER, 6 - 17 GHz
Typical Supply Current vs. Vdd
Vdd1,2,3 (V)
+5
Vgg1,2 (V)
0V to -2V
Idd Total (mA)
170
Igg Total (mA)
<3 µA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
6-5
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]