English
Language : 

HMC636ST89_11 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
Pin Descriptions
Pin Number
Function
1
RFIN
9
3
RFOUT
2, 4
GND
v02.0311
HMC636ST89 / 636ST89E
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Description
This pin is DC coupled. An off-chip
DC blocking capacitor is required.
RF Output and DC BIAS for the amplifier.
See Application Circuit for off-chip components.
These pins and package bottom must
be connected to RF/DC ground.
Interface Schematic
Application Circuit
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com