HMC609LC4_09 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

v02.0508
HMC609LC4
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
8
Power Compression @ 3 GHz
25
20
15
10
5
Pout
Gain
PAE
0
-10 -8 -6 -4 -2 0 2 4 6 8
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +6.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 16.7 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7 Vdc
+15 dBm
175 °C
1.1 W
60 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+5.5
+6.0
+6.5
Idd (mA)
160
170
180
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8 - 234
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com