HMC608LC4 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz

v01.0707
5
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 22.18 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7 Vdc
-4.0 to -1.0 Vdc
+10 dBm
175 °C
2W
45 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC608LC4
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
300
+5.0
310
+5.5
325
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 310 mA at +5.0V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5 - 314
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com