HMC519 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz

1
Pad Descriptions
Pad Number
Function
1
RFIN
v00.0904
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Description
This pad is AC coupled and matched to
50 Ohms from 18 - 32 GHz.
Interface Schematic
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
5
6, 7, 8
Die Bottom
RFOUT
G3, 2, 1
GND
This pad is AC coupled and matched to
50 Ohms from 18 - 32 GHz.
These pads must be connected to RF/DC
ground for proper operation.
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
1 - 178
Note: G1, G2 and G3 must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com