HMC490_09 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz

v02.0907
HMC490
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
1
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1,8, 7
Vgg1, 2, 3
Gate control for amplifier. Adjust to achieve Id of 200 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and 0.01
μF are required.
2
RFIN
This pad is AC coupled
and matched to 50 Ohms.
3, 4, 5
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass capacitors
of 100 pF and 0.01 μF are required.
6
Die Bottom
RFOUT
GND
This pad is AC coupled
and matched to 50 Ohms.
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
1 - 52
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