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HMC490 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz | |||
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v01.1003
MICROWAVE CORPORATION
HMC490
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
1
Pad Descriptions
Pin Number
Function
Description
1,8, 7
Vgg1, 2, 3
Gate control for ampliï¬er. Adjust to achieve Id of 200 mA.
Please follow âMMIC Ampliï¬er Biasing Procedureâ
Application Note. External bypass capacitors of 100 pF and
0.01 µF are required.
Interface Schematic
2
RF IN
This pad is AC coupled and matched to 50 Ohms from
12 - 17 GHz.
3, 4, 5
Vdd1, 2, 3
Power Supply Voltage for the ampliï¬er. External bypass
capacitors of 100 pF and 0.01 µF are required.
4
Die Bottom
RF OUT
GND
This pad is AC coupled and matched to 50 Ohms from
12 - 17 GHz.
Die Bottom must be connected to RF/DC ground.
1 - 108
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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