HMC849LP4CE_1 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz

v01.1009
HMC849LP4CE
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 6 GHz
Absolute Maximum Ratings
Bias Voltage (Vdd)
7V
Control Voltage (Vctl, EN)
-1V to Vdd +1V
RF Input Power *
Through Path 3V/5V 30.60 / 33 dBm
Termination Path 3V/5V 26.4 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 17.6 mW/°C for through path, and
6.8 mW/°C for termination path above 85 °C)
Through Path
Termination Path
1.144 W
0.441 W
Thermal Resistance
(channel to package bottom)
Through Path
Termination Path
56.8 °C/W
147.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
ESD Sensitivity (HBM)
-40 to +85 °C
Class 1A
* The RF input power is quite lower than the breakdown
power levels. Hence, the only concern with this product
is the thermal limit.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Bias Voltage & Current
Vdd
(V)
3
5
Idd (Typ.)
(mA)
0.80
0.85
Digital Control Voltages
State
Low
High
Bias Condition
0 to +0.8 Vdc @ <1 μA Typical
+2.0 to +5.0 Vdc @ 30 μA Typical
Truth Table
Control Input
Vctl
EN
Low
Low
High
Low
Low
High
High
High
Signal Path State
RFC - RF1
RFC - RF2
OFF
ON
ON
OFF
OFF
OFF
OFF
OFF
14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
14 - 215