HMC772LC4 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz

v01.0709
Absolute Maximum Ratings
Drain Bias Voltage
Drain Bias Current
RF Input Power
Gate Bias Voltage
Continuous Pdiss (T = 85 °C)
(derate 5.8 mW/°C above 85 °C)
Thermal Resistance
(Channel to ground paddle)
Channel Temperature
Storage Temperature
Operating Temperature
+5V
60 mA
5 dBm
-1 to 0.3 V
0.55 W
172 °C/W
180 °C
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC772LC4
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
8 - 385