HMC753LP4_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz

v01.0609
Absolute Maximum Ratings
Drain Bias Voltage
RF Input Power
Gate Bias Voltage, Vgg1
Gate Bias Voltage, Vgg2
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
Thermal Resistance
(Channel to die bottom)
Storage Temperature
Operating Temperature
+6.0V
12 dBm
-1 to 0.3V
0 to 2.5V
180 °C
0.8 W
119 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC753LP4E
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Package Information
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL
BE 0.05mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND
PATTERN.
Part Number
Package Body Material
HMC753LP4E
RoHS-compliant Low Stress Injection Molded Plastic
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
Lead Finish
100% matte Sn ^[2]
Package Marking ^[1]
753
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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