HMC752LC4 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz

v00.0409
Power Compression @ 28 GHz
30
25
20
Pout
Gain
15
PAE
10
5
0
-25
-20
-15
-10
-5
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage
RF Input Power
Gate Bias Voltage
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6.7 mW/°C above 85 °C)
Thermal Resistance
(Channel to ground paddle)
Storage Temperature
Operating Temperature
+4.5V
-5 dBm
-1 to 0.3V
175 °C
0.21 W
148 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC752LC4
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 28 GHz
Gain, Noise Figure & P1dB vs.
8
Supply Voltage @ 28 GHz
28
7
24
6
20
Gain
5
P1dB
16
4
12
3
8
2
4
1
Noise Figure
0
0
2.5
3
3.5
Vdd (V)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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