HMC659LC5 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz

v01.0308
Power Compression @ 2 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT POWER (dBm)
Power Compression @ 15 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 37 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
9 Vdc
-2 to 0 Vdc
+2V to +4V
+20 dBm
175 °C
3.3 W
27.3 °C/W
-65 to 150 °C
-40 to 85 °C
HMC659LC5
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Power Compression @ 7 GHz
32
28
24
20
16
12
8
Pout
Gain
4
PAE
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT POWER (dBm)
6
Power Dissipation
5
4
3
2
1
Max Pdis @ 85C
2 GHz
12 GHz
0
-10
-5
0
5
10
15
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Vdd (V)
7.5
8.0
8.5
Idd (mA)
299
300
301
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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