HMC635LC4_10 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz

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Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3, 4)
Gate Bias Voltage (Vgg1, Vgg2)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 70 °C)
(derate 15.1 mW/°C above 70 °C)
Thermal Resistance
(channel to package base)
Storage Temperature
Operating Temperature
+5.5V
-3 to 0V
15 dBm
175 °C
1.575 W
66.4 °C/W
-65 to +150 °C
-55 to +70 °C
Outline Drawing
HMC635LC4
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Typical Supply Current vs. Vdd
Vdd (V)
4.5
Idd (mA)
8
277
5.0
280
5.5
286
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80
MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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