HMC633_11 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz

v00.1107
HMC633
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 - 17 GHz
Gain, Power & Output IP3
vs. Gate Voltage @ 10 GHz
35
240
210
30
180
150
25
120
90
20
15
-0.8
Idd
-0.77
-0.75
-0.73
-0.7
Vgg (V)
Gain
P1dB
Psat
OIP3
-0.67
60
30
0
-0.65
2
Absolute Maximum Ratings
Drain Bias Voltage
(Vdd1, Vdd2, Vdd3, Vdd4)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-3 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc) +5 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 11.76 mW/°C above 85 °C)
1.06 W
Thermal Resistance
(channel to die bottom)
85 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
4.5
178
5.0
180
5.5
183
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
2-4