HMC609LC4 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

v01.0807
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFin)(Vdd = +6.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 16.7 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7 Vdc
+15 dBm
175 °C
1.1 W
60 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC609LC4
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
5
Typical Supply Current vs. Vdd
Vdd (V)
+5.5
+6.0
+6.5
Idd (mA)
160
170
180
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
5 - 207