HMC590LP5_09 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz

v01.0107
HMC590LP5 / 590LP5E
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Current @ 8 GHz
36
32
28
Gain
P1dB
Psat
24
20
16
940
1140
Idd SUPPLY CURRENT (mA)
1340
Reverse Isolation
vs. Temperature, 7V @ 820 mA
0
-10
-20
+25C
+85C
-30
-40C
-40
-50
-60
-70
-80
6 6.5 7 7.5 8 8.5 9
FREQUENCY (GHz)
9.5 10
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 75 °C)
(derate 59.8 mW/°C above 75 °C)
5.98 W
Thermal Resistance
(channel to package bottom)
16.72 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Gain & Power vs. Supply Voltage @ 8 GHz
34
32
30
28
Gain
P1dB
26
Psat
24
22
20
18
6.5
7
7.5
Vdd SUPPLY VOLTAGE (Vdc)
11
Power Dissipation
6
5.5
5
4.5
6 GHz
7 GHz
8 GHz
4
9 GHz
10 GHz
3.5
3
-14 -10
-6
-2
2
6
INPUT POWER (dBm)
10
14
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
824
+7.0
820
+7.5
815
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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