HMC565LC5 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz

v00.0906
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.5 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+3.5 Vdc
0 dBm
175 °C
0.753 W
119.5 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC565LC5
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 6 - 20 GHz
4
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.5
+3.0
+3.5
Idd (mA)
51
53
56
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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