HMC564LC4 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs SMT PHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz

v00.0906
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFin)
(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 12.9 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+3.5 Vdc
+5 dBm
175 °C
1.16 W
77.5 °C/W
-65 to +150 °C
-40 to +85 °C
HMC564LC4
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 7 - 14 GHz
5
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
2.5
49
3.0
51
3.5
53
Note: Amplifier will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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