HMC562 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz

v01.0406
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +10 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 26 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+10 Vdc
-2.0 to 0 Vdc
+23 dBm
175 °C
2.3 W
39 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
HMC562
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
1
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8
+8.5
Idd (mA)
79
80
81
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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