HMC516LC5_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz

v02.1208
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 14 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+4 Vdc
+5 dBm
175 °C
1.25 W
71 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
HMC516LC5
SMT PHEMT LOW NOISE
AMPLIFIER, 9 - 18 GHz
8
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+2.5
61
+3.0
65
+3.5
69
Note: Amplifier will operate over full voltage range shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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