HMC499LC4_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SMT PHEMT MEDIUM POWER AMPLIFIER, 21 - 32 GHz

v03.1208
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 25 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
-4 to 0 Vdc
+20 dBm
175 °C
2.25 W
40 °C/W
-65 to +150 °C
-40 to +85 °C
HMC499LC4
SMT PHEMT MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
193
+5.0
200
+5.5
207
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 200 mA at +5V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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