HMC498LC4_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz

v02.1208
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 18 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
-4.0 to 0 Vdc
+10 dBm
175 °C
1.62 W
55.6 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
HMC498LC4
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
239
250
262
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 250 mA at +5V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
11 - 285