HMC498 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz

v00.0903
MICROWAVE CORPORATION
HMC498
GaAs PHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc
Gate Bias Voltage (Vgg)
-4.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
2.65 W
Thermal Resistance
(channel to die bottom)
34 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Outline Drawing
Typical Supply Current vs. Vdd
1
Vdd (Vdc)
Idd (mA)
+4.5
241
+5.0
250
+5.5
258
+3.0
240
+3.5
250
+4.0
259
Note: Amplifier will operate over full voltage ranges shown above. Vgg
adjusted to achieve Idd= 250 mA at +5.0V and +3.5V.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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