HMC480ST89 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz

v00.0404
MICROWAVE CORPORATION
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +5 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.25 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+6.0 Vdc
+15 dBm
150 °C
0.536 W
122 °C/W
-65 to +150 °C
-40 to +85 °C
HMC480ST89
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-108S OR EQUIVALENT
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING
3. LEAD PLATING: 80Sn/20Pb
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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