HMC479ST89_10 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz

v02.0710
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 14.76 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+6.0 Vdc
+17 dBm
150 °C
0.960 W
67.6 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC479ST89 / 479ST89E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
ELECTROSTATIC SENSITIVE DEVICE
8
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC479ST89
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC479ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
H479
XXXX
H479
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
8 - 119