HMC479ST89 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz

v00.0204
MICROWAVE CORPORATION
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vcc = +4.2 Vdc) +17 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 14.76 mW/°C above 85 °C)
0.960 W
Thermal Resistance
(junction to lead)
67.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
8 - 277