HMC478ST89 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz

v02.1205
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 9.5 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6.0 Vdc
+5 dBm
150 °C
0.615 W
105.6 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
HMC478ST89 / 478ST89E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC478ST89
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC478ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
H478
XXXX
H478
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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