HMC478MP86 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz

v00.1004
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFin)(Vcc = +4.3 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6.0 Vdc
100 mA
+5 dBm
150 °C
0.583 W
111.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
HMC478MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
8
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Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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