HMC474MP86_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz

v01.0906
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 4.3 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6.0 Vdc
35 mA
+5 dBm
150 °C
0.280 W
232 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1B
Outline Drawing
HMC474MP86 / 474MP86E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
ELECTROSTATIC SENSITIVE DEVICE
9
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
Package Body Material
HMC474MP86
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC474MP86E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking
474
474
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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