HMC465 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz

v03.0704
HMC465
MICROWAVE CORPORATION
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
RF Input Power (RFin)(Vdd = +8.0 Vdc) +23 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
2.17 W
Thermal Resistance
(channel to die bottom)
41.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
161
160
159
1
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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