HMC464_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz

v04.0308
Outline Drawing
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
3
Pad Descriptions
Pad Number
Function
1
RFIN
2
Vgg2
3
RFOUT & Vdd
4
Vgg1
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Description
This pad is AC coupled and matched to 50 Ohms.
Gate Control 2 for amplifier. +3V should be applied to
Vgg2 for nominal operation.
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
Gate Control 1 for amplifier. Adjust between -2 to 0V
to achieve Idd= 290 mA.
Interface Schematic
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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