HMC463 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz

v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
Gain @ Several Control Voltages
20
18
16
14
12
10
8
6
4
2
0
-2
-4
Vgg2=-1.3 V
Vgg2=-0.9 V
-6
Vgg2=-1.2 V
Vgg2=-0.6 V
-8
Vgg2=-1.1 V
Vgg2=-1.0 V
Vgg2=-0.4 V
Vgg2=0 V
-10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)(AGC)
(Vdd -9.0)
Vdc to +2.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +23 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 50 mW/°C above 85 °C)
4.5 W
Thermal Resistance
(channel to die bottom)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
Idd (mA)
58
60
62
1
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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