HMC451LC3_08 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz

v04.1208
Absolute Maximum Ratings
Drain Bias Voltage (Vdd = Vdd )
1
2
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 12.4 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+10 dBm
175 °C
1.1 W
80 °C/W
-65 to +150 °C
-40 to +85 °C
HMC451LC3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Typical Supply Current vs. Vdd₁ = Vdd₂
Vdd = Vdd (V)
1
2
+4.5
Idd = Idd (mA)
1
2
111
+5.0
114
+5.5
116
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50
MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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