HMC449_07 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT

v01.1007
Absolute Maximum Ratings
RF Input (Vcc= +5V)
Supply Voltage (Vdd)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.3 mW/°C above 85 °C)
Thermal Resistance
(junction to die bottom)
Storage Temperature
Operating Temperature
+20 dBm
+6.0 Vdc
175 °C
744 mW
121 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC449
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
2
4.5
49
5.0
50
5.5
51
Note:
Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP - 2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE.
4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER.
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METALIZATION: GOLD
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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