HMC442LM1_09 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 24.0 GHz

v01.0807
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5Vdc,
Idd = 85 mA)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.46 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
-8.0 to 0 Vdc
+16 dBm
175 °C
0.491 W
183 °C/W
-65 to +150 °C
-40 to +85 °C
HMC442LM1
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 24.0 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
Idd (mA)
82
+5.0
85
+5.5
87
+2.7
79
+3.0
83
+3.3
86
Note: Amplifier will operate over full voltage range shown above
11
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. MATERIAL: PLASTIC
2. PLATING: GOLD OVER NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. ALL TOLERANCES ARE ±0.005 [±0.13].
5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND.
6. • INDICATES PIN 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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