HMC442LC3B Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz

v00.1104
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +5.0
Vdc, Idd = 85 mA)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.46 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
-8.0 to 0 Vdc
+16 dBm
175 °C
0.491 W
183 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
HMC442LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
5
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
Idd (mA)
82
84
86
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30 - 80 MICROINCHES GOLD
OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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