HMC442 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz

MICROWAVE CORPORATION
v01.0304
HMC442
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-4.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 5.46 mW/°C above 85 °C)
0.491 W
Thermal Resistance
(channel to die bottom)
183 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Outline Drawing
Typical Supply Current vs. Vdd
1
Vdd (Vdc)
Idd (mA)
+4.5
82
+5.0
85
+5.5
89
+2.7
79
+3.0
83
+3.3
86
Note: Amplifier will operate over full voltage ranges shown above
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
1 - 71