HMC441LP3 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz

v01.0604
MICROWAVE CORPORATION
HMC441LP3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6.0 Vdc
Gate Bias Voltage (Vgg1,Vgg2)
-8.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 10 mW/°C above 85 °C)
0.65 W
Thermal Resistance
(channel to ground paddle)
100 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
Typical Supply Current vs. Vdd
8
Vdd (V)
Idd (mA)
+5.5
81
+5.0
80
+4.5
79
+3.3
72
+3.0
71
Note: Amplifier will operate over full voltage range shown above
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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